TECHNICAL SCHEME

Projects under Research Solution Cases

Boron Paste and its Laser Doping

The purpose of development of Laser doping via boron paste as well as related doping process is applied to the LBSF in p-PERL cells or the SE structure in N-TOPCon cells.

  1. By laser doping, surface boron concentration could be over 1E20cm-3 and better electrode contact could be formed.

  2. The depth of LBSF could be adjusted by doping process, and adapted simultaneously   to Aluminum slurry and its sintering process, obtaining a stable LBSF.

  3. Improving cell’s Voc and efficiency.


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